Low-voltage high-speed programming/erasing floating-gate memory device with gate- all-around polycrystalline silicon nanowire
نویسندگان
چکیده
Articles you may be interested in Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays Appl. Enhancement of programming speed on gate-all-around poly-silicon nanowire nonvolatile memory using self-aligned NiSi Schottky barrier source/drain High-performance gate-all-around polycrystalline silicon nanowire with silicon nanocrystals nonvolatile memory Appl. Impact of floating dot distribution on memory characteristics of self-aligned dots-on-nanowire memory Random telegraph signal noise in gate-all-around silicon nanowire transistors featuring Coulomb-blockade characteristics Appl.
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